| PART |
Description |
Maker |
| IDT7200L IDT7201LA IDT7202LA |
CMOS ASYCHRONOUS FIFO 256 x 9 Memory(CMOS异步先进先出256x 9位存储器)
CMOS ASYCHRONOUS FIFO 512 x 9 Memory(CMOS异步先进先出512x 9位存储器)
CMOS ASYCHRONOUS FIFO 1024 x 9 Memory(CMOS异步先进先出1024x 9位存储器) 的CMOS异步先进先出存储024 × 9的CMOS（异步先进先024x 9位存储器
|
Intersil Corporation
Intersil, Corp.
|
| AM7204A AM7204A-25RC AM7204A-15RC AM7204A-35RC AM7 |
HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY 4K X 9 OTHER FIFO, 50 ns, PQCC32
|
Advanced Micro Devices, Inc.
|
| ISL6700IBZ ISL6700IR ISL6700IRZ ISL6700IB ISL6700 |
1024 x 9 x 2 Asynchronous Bidirectional FIFO Memory 44-PLCC 0 to 70
1024 x 9 x 2 Asynchronous Bidirectional FIFO Memory 64-TQFP 0 to 70
80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver
|
INTERSIL[Intersil Corporation]
|
| TC58FVT800-12 TC58FVB800F TC58FVT800FT-10 TC58FVT8 |
(TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MS81V04160A MS81V04160A-20TB MS81V04160A-25TB MS81 |
Dual FIFO (262,214 Words × 8 Bits) × 2
|
OKI electronic componets
|
| MS8104160A-XXTB MS8104160A |
Dual FIFO (262,214 Words 】 8 Bits) 】 2
|
OKI[OKI electronic componets]
|
| MS8104160XXTB MS8104160 |
(262,214-word x 8-Bits) x 2 Dual FIFO
|
OKI[OKI electronic componets]
|
| TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB |
64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| M66255FP M66255E |
8192 x 10-BIT LINE MEMORY (FIFO)
From old datasheet system
8192 10-BIT LINE MEMORY (FIFO)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 7202LA20JG IDT7200L 7201LA20DB 7201LA35J 7201LA20T |
CMOS ASYNCHRONOUS FIFO
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
First-In/First-Out dual-port memory
|
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