| PART |
Description |
Maker |
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9V2040S3S ISL9V2040P3 ISL9V2040D3S |
EcoSPARK TM 200mJ, 400V, N-Channel Ignition IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
EcoSPARKTM 200mJ 400V N-Channel Ignition IGBT
EcoSPARKTM 200mJ/ 400V/ N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| HGTP14N44G3VL |
300mJ, 440V, N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
| OD-120075-MEL OD-140075-MEL OD-240075-MEL OD-12015 |
OPTIDRIVE 400V 0.75KW
OPTIDRIVE 400V 2.2KW
OPTIDRIVE 400V 1.5KW OPTIDRIVE 400V 1.5千瓦
OPTIDRIVE 200V 1.5KW OPTIDRIVE 2001.5千瓦
OPTIDRIVE 400V 11.0KW OPTIDRIVE 400V 11.0KW
OPTIDRIVE 400V 7.5KW OPTIDRIVE 400V 7.5千瓦
OPTIDRIVE 400V 5.5KW OPTIDRIVE 400V 5.5KW干燥
OPTIDRIVE 200V 2.2KW OPTIDRIVE 2002.2KW外型
OPTIDRIVE 200V 0.37KW OPTIDRIVE 200伏功0.37KW
OPTIDRIVE 400V 4.0KW OPTIDRIVE 400V 4.0KW
OPTIDRIVE 200V 0.75KW OPTIDRIVE 200伏功.75KW
|
Renesas Electronics, Corp.
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| CFRMT104-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=400V, V-R=400V, I-O=1A
|
Comchip Technology
|
| FMG-33S/R |
Ultra-Fast-Recovery Rectifier Diodes(- 400V) 超快速恢复整流二极管- 400V
|
Sanken Electric Co., Ltd.
|
| FMG-23S/R |
Ultra-Fast-Recovery Rectifier Diodes(- 400V) 超快速恢复整流二极管- 400V
|
Sanken Electric Co., Ltd.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL |
400V N-Channel B-FET / Substitute of IRFW740A
400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
