| PART |
Description |
Maker |
| HMD8M32M16EG HMD8M32M16EG-5 HMD8M32M16EG-6 |
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD16M36M12EG-6 HMD16M36M12EG-5 HMD16M36M12EG |
64MBYTE (16MX36) EDO/WITH PARITY MODE 4K REF. 72PIN-SIMM DESIGN
|
Hanbit Electronics Co.,Ltd
|
| HMD8M36M24EG HMD8M36M24EG-5 HMD8M36M24EG-6 |
32Mbyte(8Mx36) 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD1M36M3EG HMD1M36M3EG-6 HMD1M36M3EG-5 |
4Mbyte(1Mx36) 72-pin SIMM EDO with Parity MODE, 1K Ref. 5V 4MbyteMx362引脚平价模式，每1000参考上海药物研究所易都5V
|
Hanbit Electronics Co., Ltd.
|
| HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M5M467405DTP-5S M5M465165DTP-6S M5M467805DTP-5S M5 |
4M X 16 EDO DRAM, 50 ns, PDSO50
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 江户模式67108864位（16777216 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
