PART |
Description |
Maker |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
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Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
CM100DU-12F |
Trench Gate Design Dual IGBTMOD?100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060 3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060 1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060 DC-DC CONVERTER 50~60W DC - DC转换器的5060 XC2VP7-6FFG672C DC - DC转换器的5060 2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060 DC-DC CONVERTER 50~60W 的DC - DC转换器的5060 6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN ; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
MCP602-IOT MCP604-ISL MCP604-ISN MCP604-IST MCP601 |
300000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 300000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 300,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7V to 5.5V Single Supply CMOS Op Amps 2.7V5.5V单电源CMOS运算放大 2.7V to 5.5V Single Supply CMOS Op Amps 2.7V.5V单电源CMOS运算放大
|
Microchip Technology Inc. Microchip Technology, Inc.
|
XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676 100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456 300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456 Spartan-IIE FPGA Product Availability
|
XILINX INC Xilinx, Inc.
|
HCTS20MS HCTS20D_SAMPLE HCTS20DMSR HCTS20HMSR HCTS |
NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic Switch Boot; For Use With:Toggle Switches Radiation Hardened Dual 4-Input NAND Gate HCT SERIES, DUAL 4-INPUT NAND GATE, CDFP14
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HA14G HA12G HA18G HA11G HA13G HA15G HA16G HA17G |
2000000 SYSTEM GATE 1.5 VOLT FPGA 100000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN 1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
|
济南固锝电子器件有限公司 JGD[Jinan Gude Electronic Device] Jinan Gude Electronic Device Co., Ltd.
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