| PART |
Description |
Maker |
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| SCH2817 |
MOSFET , SBD
|
SANYO[Sanyo Semicon Device]
|
| QS5U26TR |
2.5V Drive Pch SBD MOSFET
|
Rohm
|
| ES6U1T2R |
1.5V Drive Pch SBD MOSFET
|
ROHM
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5852 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| TT8U2 TT8U2TCR |
1.5V Drive Pch SBD MOSFET
2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TSST8, 8 PIN
|
Rohm
Central Semiconductor, Corp.
|
| SCH2821 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| FW507 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
