PART |
Description |
Maker |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
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PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
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Pasternack Enterprises,...
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FS10SM-16 FS10SM-16A |
Power MOSFETs: FS Series, High Voltage, 800V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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MJW16212 ON2060 |
Power 10A 650V NPN POWER TRANSISTOR From old datasheet system High and Very High Resolution Monitors
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ON Semiconductor http://
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NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 Silicon Complementary Transistors High Power, High Current Switch
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NTE[NTE Electronics]
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TDA4814 Q67000-A8163 TDA4814A |
PFC IC for High Power Factor and Acti... From old datasheet system Power Factor Controller IC for High Power Factor and Active Harmonic Filter
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
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Cornell Dubilier Electronics, Inc. http:// Cornell Dubilier Electronic... Cornell Dubilier Electr...
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MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
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Marktech Corporate
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IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
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International Rectifier
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FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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Mitsubishi Electric Semiconductor
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