| PART |
Description |
Maker |
| APTML10UM09R004T1AG |
Linear MOSFET Power Module
|
Microsemi Corporation
|
| APTML602U12R020T3AG |
Linear MOSFET Power Module
|
Microsemi Corporation
|
| APTML602U12R020T3AG10 |
Linear MOSFET Power Module
|
Microsemi Corporation
|
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
2.4-2.5GHz and 4.95.9GHz Dual Band Linear Power Amplifier Module
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system
KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc.
Anadigics Inc
|
| RF31641 |
3V 1900MHz LINEAR POWER AMPLIFIER MODULE
|
RF Micro Devices
|
| RF6100-4_06 RF6100-4 RF6100-4PCBA-41X RF6100-406 |
3V 1900MHZ LINEAR POWER AMPLIFIER MODULE
|
RFMD[RF Micro Devices]
|
| RF6100-1_06 RF6100-1 RF6100-1PCBA-41X RF6100-106 |
3V 900MHZ LINEAR POWER AMPLIFIER MODULE
|
RFMD[RF Micro Devices]
|
| RF5198 RF5198PCBA-41X RF51981 |
3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE
|
RF Micro Devices
|
