PART |
Description |
Maker |
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
DME150-2 DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
IRFP2410 |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
|
International Rectifier
|
AP2318GEN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
UB3010 |
N-Ch 30V Fast Switching MOSFETs N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited Unitpower Technology Li...
|
IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Single Die MOSFET HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http:// IXYS[IXYS Corporation] IXYS, Corp.
|
IXFE180N20 |
HiPerFET Power MOSFETs Single Die MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
IXFR180N10NBSP IXFR180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs ISOPLUS247 From old datasheet system
|
IXYS[IXYS Corporation]
|