| PART |
Description |
Maker |
| FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
| FMM60-02TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FT0021 FT0021-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, I...
|
| SFF75N08Z SFF75N08M |
55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| IXFV110N25T IXFV110N25TS |
Trench Gate Power HiperFET
|
IXYS Corporation
|
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| L608 FMD80-0045PS |
MOSFET Modules
Chopper with Trench Power MOSFET and Schottky Diode
|
IXYS[IXYS Corporation]
|
