PART |
Description |
Maker |
FDMS2572 |
N-Channel UltraFET Trench MOSFET 27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的,0.150 Ohm的N通道,逻辑层次,额定静电,功率MOSFET 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET From old datasheet system
|
Fairchild Semiconductor, Corp. INTERSIL[Intersil Corporation]
|
MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
IRF610-613 IRF613 IRF611 IRF612 MPT2N18 MPT2N20 IR |
SPST, 150mA PC Mount Pushbutton N沟道功率MOSFET.5A的,15000 N-Channel Power MOSFETs, 3.5A, 150-200V N沟道功率MOSFET.5A的,15000 N-Channel Power MOSFETs/ 3.5A/ 150-200V N-Channel Power MOSFETs 3.5A 150-200V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
RF1K4922396 RF1K49223 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 2.5A, -30V, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
FDS2572 FDS2572NL |
150V N-Channel UltraFET Trench MOSFET 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
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