| PART |
Description |
Maker |
| KU3600N10D |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS086N10F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC
|
| KU310N10D-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS
DC-DC Converters Switching Voltage Regulators Motor Drivers
MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
| UPA505T PA505T G11241EJ1V0DS00 |
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
NEC[NEC]
|
| UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| V10P6HM3 V10P6-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
