| PART |
Description |
Maker |
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| KAD5612P KAD5612P-12Q72 KAD5612P-17Q72 KAD5612P-21 |
Dual 12-Bit, 250/210/170/125MSPS A/D Converter
|
ETC
|
| KAD5612P09 |
Dual 12-Bit, 250/210/170/125MSPS A/D Converter
|
Intersil Corporation
|
| NX1029X |
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| 2729-170 |
170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100?, 10%
170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100刁, 10%
|
ADPOW[Advanced Power Technology]
|
| AD9250 |
14-Bit, 170 MSPS/250 MSPS, JESD204B, Dual Analog-to-Digital Converter
|
Analog Devices
|
| V23809-C8-T10 |
Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 170 MBd 1x9 Transceiver with ST Connector 多模1300纳米的LED与ST快速以太网/光纤分布式数据介 ATM70 MBdx9收发器？连接
MM 170 MBd FE/FDDI/ATM Transceiver
|
Infineon Technologies AG
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| AGR21180EF |
180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
|
