| PART |
Description |
Maker |
| NX3008NBKW NX3008NBKW-15 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NX3008NBKT-115 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ?
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| TP2435 TP2435N8 TP2435NW |
P-Channel Enhancement-Mode Vertical DMOS FETs 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex Inc
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| CMP350-9601 CMP350-9603 CMP350 CMP350-9602 CMP350- |
4-OUTPUT 350 W AC-DC REG PWR SUPPLY MODULE
Quad output 350 Watt AC/DC high wattage power supplies with PFC
|
ARTESYN[Artesyn Technologies]
|
| HGTP14N40F3VL |
19 A, 350 V, N-CHANNEL IGBT, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| SI1013R-T1-GE3 |
350 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| IRFU321 |
3.1 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
HARRIS SEMICONDUCTOR
|
| IRF721R |
3.3 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
|
