PART |
Description |
Maker |
STGW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
STGW20V60DF STGWT20V60DF STGB20V60DF STGP20V60DF |
600 V, 20 A very high speed trench gate field-stop IGBT Low thermal resistance
|
List of Unclassifed Manufacturers List of Unclassifed Manufac... STMicroelectronics
|
SMBJ26A SMBJ7.5 SMBJ28 SMBJ8.5 SMBJ24C SMBJ22C SMB |
Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Resets 16-CDIP -55 to 125 CMOS Strobed Hex Inverter/Buffer with 3-State Outputs 16-SO -55 to 125 High Speed CMOS Logic Octal Inverting Transparent Latch with 3-State Outputs 20-CDIP -55 to 125 High Speed CMOS Logic Analog Multiplexers/Demultiplexers 16-CDIP -55 to 125 High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-CDIP -55 to 125 High Speed CMOS Logic Dual Binary Up-Counter 16-CDIP -55 to 125 CMOS Dual Binary Up-Counter 16-CDIP -55 to 125 Replaced by VFC320 : Synchronized Voltage-To-Frequency Converter 16-CDIP 12-bit, 25 MSPS 1-Channel AFE for CCD Sensors with Fixed TG 96-BGA MICROSTAR JUNIOR Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA CMOS Presettable BCD Up/Down Counter 16-TSSOP -55 to 125 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA Octal D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125
|
Micro Commercial Compon... http:// Micro Commercial Components Corp. Micro Commercial Components, Corp.
|
CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts 128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速,饱和硅晶体管开关进步党(高速,饱和开关型进步党硅晶体管)
|
TT electronics Semelab, Ltd. STMicroelectronics N.V. SEME-LAB[Seme LAB]
|
IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
IKW20N60H3 |
High speed DuoPack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
RJK6018DPK11 |
600 V - 30 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJP6016JPE-15 |
600 V - 40 A- N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|