| PART |
Description |
Maker |
| AM2302N |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| AOTF4126 |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge
|
Alpha & Omega Semiconductor...
|
| IKB06N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| Q67040-S4514 IKW08T120 |
LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE
|
INFINEON[Infineon Technologies AG]
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| IGW08T120 |
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 8A 1200V TO247 IGBT
|
List of Unclassifed Manufacturers
ETC[ETC]
Infineon
|
| KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| IGW15T120 |
IGBTs & DuoPacks - 15A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop Technology
|
INFINEON[Infineon Technologies AG]
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
