| PART |
Description |
Maker |
| ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2341A |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| IRF7530TR |
Trench Technology
|
International Rectifier
|
| AOT10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| TSM2301CXRF |
Advance trench process technology
|
TY Semiconductor Co., Ltd
|
