| PART |
Description |
Maker |
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| AM2321P |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| KRF7325 |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| AOTF4126 |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge
|
Alpha & Omega Semiconductor...
|
| IKP15N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON
|
| Q67040-S4514 IKW08T120 |
LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE
|
INFINEON[Infineon Technologies AG]
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| IGW40T120 Q67040-S4519 GW40T120 |
From old datasheet system
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 40A 1200V TO247 IGBT
|
INFINEON[Infineon Technologies AG]
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
