| PART |
Description |
Maker |
| 2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62
From old datasheet system
Low Frequency Transistor (20V, 3A)
Low Frequency Transistor(20V, 3A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| 2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
| EN3235A 2SC4482U-AN 2SC4482T-AN |
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP
|
ON Semiconductor
|
| ZXTN25020CFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| 2SD2144S 2SD2114K 2SD2114S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
20V,0.5A high-current gain medium power transistor
|
ROHM
|
| 2SD2118Q 2SD2097 2SD2098 2SD2118 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-252VAR 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|52VAR
|
ROHM
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| 2SA1615-Z 2SA1615-ZK 2SA1615L 2SA1615-ZL 2SA1615 |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-252AA
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-251AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC]
NEC Corp.
|
| 2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
