| PART |
Description |
Maker |
| IGW50N65F5 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
| PG-TO220-3 IKP08N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IKP08N65F5 IKP08N65F5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IGZ100N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| IKW75N65EH5 IKW75N65EH5-15 |
650V DuoPack IGBT and full-rated diode High speed series fifth generation
|
Infineon Technologies A...
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
