PART |
Description |
Maker |
VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd. Kersemi Electronic Co., Ltd...
|
VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VF60120C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
V20WL45-M3 20WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
6L45SB-SMBF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
TSF10U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
5L100AF-SMAF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|