| PART |
Description |
Maker |
| VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VB40100CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| 12L100-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| V10WL45-M3 V10WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 6L45-DO 6L45-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VBT3045CBP-E3-8W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF20U45C TSF20U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| VT10200C-M3-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT2045CBP12 VT2045CBP-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF30H120C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
