| PART |
Description |
Maker |
| VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| 12L100-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VBT2045CBP VBT2045CBP-E3-4W VBT2045CBP-E3-8W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF30U45C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| 5V100-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| TSF20U45C TSF20U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| TSF20H100C TSF20H120C TSF20H150C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| VFT1080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
