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| TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -20 rDS(on) Max (W) 1.4 @ VGS = -10 V 3.5 @ VGS = -4.5 V VGS(th) (V) -1.3 to - 3 V -1.3 to - 3 V ID (A) -0.41 -0.27 FEATURES D D D D D High-Side Switching Low On-Resistance: 0.9 W Low Threshold: -2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-236 (SOT-23) G 1 3 D Marking Code: P3wll P3 = Part Number Code for TP0202T w = Week Code ll = Lot Traceability S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit -20 "20 -0.41 -0.26 -0.75 0.35 0.22 357 -55 to 150 Unit V A W _C/W _C Document Number: 70208 S-04279--Rev. G, 16-Jul-01 www.vishay.com 11-1 TP0202T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -0.25 mA VDS = 0 V, VGS = "20 V VDS = -16 V, VGS = 0 V TJ = 55_C VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -0.05 A VGS = -10 V, ID = -0.2 A VDS = -10 V, ID = -0.2 A IS = -0.25 A, VGS = 0 V 250 -0.5 -0.75 1.7 0.9 600 -0.9 -1.5 3.5 1.4 W mS V -20 -1.3 -25 -2.1 -3 "100 -1 -10 mA m A V nA Symbol Test Conditions Min Typa Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0 V, f = 1 MHz VDS -16 V, VGS =-10 V, ID ^ -200 mA 2700 500 600 55 50 18 pF pC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = -15 V, RL = 75 W ID ^ -0.2 A, VGEN = -10 V RG = 6 W 8 20 20 30 12 30 ns 35 40 VPBP02 Turn-Off Time www.vishay.com 11-2 Document Number: 70208 S-04279--Rev. G, 16-Jul-01 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) -0.8 Output Characteristics -5 V -1.0 Transfer Characteristics TA = -55_C -0.6 ID - Drain Current (A) -0.8 VGS = -10 thru -6 V ID - Drain Current (A) -0.6 25_C 125_C -0.4 -4 V -0.2 -3 V 0.0 0 -1 -2 -3 -4 -0.4 -0.2 0.0 0.0 -1.5 -3.0 -4.5 -6.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-Source Voltage 5 On-Resistance vs. Drain Current rDS(on) - On-Resistance ( ) ID = -200 mA 3 rDS(on) - On-Resistance ( ) 4 4 3 VGS = -4.5 V 2 VGS = -10 V 1 2 1 ID = -50 mA 0 0 -4 -8 -12 -16 -20 0 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 180 160 140 C - Capacitance (pF) 120 100 80 60 40 20 0 0 -4 Crss Ciss Coss VGS = -0 V f = 1 MHz Capacitance -20 ID = -200 mA VGS - Gate-to-Source Voltage (V) -15 Gate Charge -10 VDS = -10 V VDS = -16 V -5 0 -8 -12 -16 -20 0 1000 2000 3000 4000 5000 6000 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70208 S-04279--Rev. G, 16-Jul-01 www.vishay.com 11-3 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Junction Temperature 1.5 1.4 1.3 rDS(on) - On-Resistance (W) (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -0.001 -25 0 25 50 75 100 125 150 0 VGS = -4.5 V ID = -50 mA VGS = -10 V ID = -200 mA IS - Source Current (A) -10.000 Source-Drain Diode Forward Voltage -1.000 TA = 150_C -0.100 TA = 25_C -0.010 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Variance Over Temperature 0.50 0.25 VGS(th) - Variance (V) 0.00 ID = -250 mA -0.25 -0.50 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70208 S-04279--Rev. G, 16-Jul-01 |
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