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| VISHAY TLMG / H / O / P / Y310. Vishay Semiconductors SMD LED in PLCC-2 Package Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLM.310. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. 19225 Features * SMD LEDs with exceptional brightness * * * * * * * * * * Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit IVmax/IVmin 1.6 Lead-free device e3 Pb Pb-free Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part TLMH3100 TLMH3101 TLMH3102 TLMO3100 TLMO3101 TLMY3100 TLMY3102 TLMG3100 TLMG3102 Color, Luminous Intensity Red, IV > 2.5 mcd Red, IV = (4 to 12.5) mcd Red, IV = (6.3 to 20) mcd Soft orange, IV > 2.5 mcd Angle of Half Intensity () 60 60 60 60 Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP Soft orange, IV = (4 to 12.5) mcd 60 Yellow, IV > 2.5 mcd Yellow, IV = (6.3 to 20) mcd Green, IV > 4 mcd Green, IV = (10 to 20) mcd 60 60 60 60 Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 1 TLMG / H / O / P / Y310. Vishay Semiconductors Part TLMG3105 TLMP3100 TLMP3101 TLMP3107 TLMP3102 Color, Luminous Intensity Green, IV = (6.3 to 20) mcd Pure green, IV > 1 mcd Pure green, IV = (1.6 to 5) mcd Pure green, IV = (2.5 to 5) mcd Pure green, IV = (2.5 to 8) mcd Angle of Half Intensity () 60 60 60 60 60 VISHAY Technology GaP on GaP GaP on GaP GaP on GaP GaP on GaP GaP on GaP Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLMG310. ,TLMH310. TLMO310. ,TLMP310. ,TLMY310. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t5s mounted on PC board (pad size > 16 mm2) Tamb 60 C tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 0.5 100 100 - 40 to + 100 - 55 to + 100 260 400 Unit V mA A mW C C C C K/W Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLMH310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part TLMH3100 TLMH3101 TLMH3102 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Symbol IV IV IV d p VF VR Cj Min 2.5 4 6.3 612 Typ. 6 Max 12.5 20 625 Unit mcd mcd mcd nm nm deg IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz 635 60 2 6 15 15 2.8 V V pF in one Packing Unit IVmax/IVmin 1.6 www.vishay.com 2 Document Number 83032 Rev. 1.7, 31-Aug-04 VISHAY Soft Orange TLMO310. Parameter Luminous intensity 1) TLMG / H / O / P / Y310. Vishay Semiconductors Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Part TLMO3100 TLMO3101 Symbol IV IV d p VF VR Cj Min 2.5 4 598 Typ. 8 Max 12.5 611 Unit mcd mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) 605 60 2 6 15 15 2.8 V V pF in one Packing Unit IVmax/IVmin 1.6 Yellow TLMY310. Parameter Luminous intensity 1) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Part TLMY3100 TLMY3102 Symbol IV IV d p VF VR Cj Min 2.5 6.3 581 Typ. 6 Max 20 594 Unit mcd mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) 585 60 2.1 6 15 15 2.8 V V pF in one Packing Unit IVmax/IVmin 1.6 Green TLMG310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part TLMG3100 TLMG3102 TLMG3105 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Symbol IV IV IV d p VF VR Cj Min 4 10 6.3 562 Typ. 9 Max 20 20 575 Unit mcd mcd mcd nm nm deg IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz 565 60 2.2 6 15 15 2.8 V V pF in one Packing Unit IVmax/IVmin 1.6 Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 3 TLMG / H / O / P / Y310. Vishay Semiconductors Pure green TLMP310. Parameter Luminous intensity 1) VISHAY Test condition IF = 10 mA Part TLMP3100 TLMP3101 TLMP3102 TLMP3107 Symbol IV IV IV IV d p VF VR Cj Min 1 1.6 2.5 2.5 555 Typ. 4 Max 5 8 5 565 Unit mcd mcd mcd mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz 555 60 2.1 6 15 15 2.8 V V pF in one Packing Unit IVmax/IVmin 1.6 Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 125 I F - Forward Current ( mA ) P - Power Dissipation ( mW ) V t p /T = 0.005 1000 0.01 Tamb < 60C 0.02 0.05 100 75 50 25 0 100 0.2 0.5 DC 10 0.1 0 20 40 60 80 100 95 9985 1 0.01 0.1 1 10 100 95 10904 Tamb - Ambient Temperature ( C ) t p - Pulse Length ( ms ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Pulse Forward Current vs. Pulse Duration 0 I V re l - Relative Luminous Intensity 10 20 60 IF - Forward Current ( mA) 30 50 40 30 20 10 0 0 20 40 60 80 100 1.0 0.9 0.8 0.7 0.6 40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 95 10905 Tamb - Ambient Temperature ( C ) 95 10319 Figure 2. Forward Current vs. Ambient Temperature for InGaN Figure 4. Rel. Luminous Intensity vs. Angular Displacement www.vishay.com 4 Document Number 83032 Rev. 1.7, 31-Aug-04 VISHAY TLMG / H / O / P / Y310. Vishay Semiconductors 10 Red I F - Forward Current ( mA ) Red 10 I v rel - Relative Luminous Intensity 100 1 1 0.1 0.1 0 95 9989 0.01 1 2 3 4 5 95 9995 1 10 I F - Forward Current ( mA ) 100 V F - Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Relative Luminous Intensity vs. Forward Current 2.0 I v rel - Relative Luminous Intensity 1.2 Red I V re l - Relative Luminous Intensity Red 1.0 0.8 0.6 0.4 0.2 0 590 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 610 630 650 670 690 95 9993 Tamb - Ambient Temperature ( C ) 95 10040 - Wavelength ( nm ) i Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Figure 9. Relative Intensity vs. Wavelength 2.4 I V re l - Relative Luminous Intensity 100 I F - Forward Current ( mA ) Red 2.0 1.6 1.2 0.8 0.4 Soft Orange 10 1 0.1 0 10 95 10321 0 1 2 3 4 5 20 0.5 50 0.2 100 0.1 200 0.05 500 I F (mA) 0.02 tp /T 95 9990 V F - Forward Voltage ( V ) 1 Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Figure 10. Forward Current vs. Forward Voltage Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 5 TLMG / H / O / P / Y310. Vishay Semiconductors 2.0 I v rel - Relative Luminous Intensity VISHAY 1.2 Soft Orange IVrel - Relative Luminous Intensity Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 590 610 630 650 670 95 9994 Tamb - Ambient Temperature ( C ) 95 10324 - Wavelength ( nm ) Figure 11. Rel. Luminous Intensity vs. Ambient Temperature Figure 14. Relative Intensity vs. Wavelength 2.4 I V re l - Relative Luminous Intensity 100 - Forward Current ( mA ) Soft Orange 2.0 1.6 1.2 0.8 0.4 0 Yellow 10 1 I F 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 I F (mA) 0.02 tp /T 0.1 0 95 9987 1 2 3 4 5 95 10259 V F - Forward Voltage ( V ) Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Figure 15. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 Soft Orange I v rel - Relative Luminous Intensity 2.0 Yellow 1.6 1.2 0.8 0.4 0 1 10 I F - Forward Current ( mA ) 100 95 9992 1 0.1 0.01 95 9997 0 20 40 60 80 100 T amb - Ambient Temperature ( C ) Figure 13. Relative Luminous Intensity vs. Forward Current Figure 16. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 6 Document Number 83032 Rev. 1.7, 31-Aug-04 VISHAY TLMG / H / O / P / Y310. Vishay Semiconductors I v rel - Relative Luminous Intensity 2.4 2.0 1.6 1.2 0.8 0.4 0 I F - Forward Current ( mA ) 100 Yellow Green 10 1 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 I F (mA) 0.02 tp /T 0.1 0 95 9986 1 2 3 4 5 95 10260 V F - Forward Voltage ( V ) Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Figure 20. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 Yellow I v rel - Relative Luminous Intensity 2.0 Green 1.6 1.2 0.8 0.4 0 1 10 I F - Forward Current ( mA ) 100 95 10320 1 0.1 0.01 95 9999 0 20 40 60 80 100 T amb - Ambient Temperature ( C ) Figure 18. Relative Luminous Intensity vs. Forward Current Figure 21. Rel. Luminous Intensity vs. Ambient Temperature 1.2 IVrel - Relative Luminous Intensity I v rel - Specific Luminous Intensity 2.4 Yellow 2.0 1.6 1.2 0.8 0.4 0 95 10263 1.0 0.8 0.6 0.4 0.2 0 550 Green 570 590 610 630 650 95 10039 - Wavelength ( nm ) - 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T Figure 19. Relative Intensity vs. Wavelength Figure 22. Specific Luminous Intensity vs. Forward Current Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 7 TLMG / H / O / P / Y310. Vishay Semiconductors 2.0 I Vrel - Relative Luminous Intensity VISHAY I v rel - Relative Luminous Intensity 10 Green Pure Green 1.6 1.2 0.8 0.4 0 1 0.1 0.01 1 95 9996 10 I F - Forward Current ( mA ) 100 95 9991 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 23. Relative Luminous Intensity vs. Forward Current Figure 26. Rel. Luminous Intensity vs. Ambient Temperature 1.2 IVrel - Relative Luminous Intensity I Spec - Specific Luninous Flux 2.4 Green Pure Green 2.0 1.6 1.2 0.8 0.4 0 540 560 580 600 620 95 10261 1.0 0.8 0.6 0.4 0.2 0 520 10 100 I F - Forward Current ( mA ) 1000 95 10038 - Wavelength ( nm ) - Figure 24. Relative Intensity vs. Wavelength Figure 27. Specific Luminous Intensity vs. Forward Current 100 Pure Green I F - Forward Current ( mA ) I Vrel - Relative Luminous Intensity 10 Pure Green 10 1 1 0.1 0.1 0 95 9988 0.01 1 2 3 4 5 95 9998 1 10 I F - Forward Current ( mA ) 100 V F - Forward Voltage ( V ) Figure 25. Forward Current vs. Forward Voltage Figure 28. Relative Luminous Intensity vs. Forward Current www.vishay.com 8 Document Number 83032 Rev. 1.7, 31-Aug-04 VISHAY TLMG / H / O / P / Y310. Vishay Semiconductors 1.2 I Vrel - Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0 500 Pure Green 520 540 560 580 600 95 10325 - Wavelength ( nm ) Figure 29. Relative Intensity vs. Wavelength Package Dimensions in mm 3.5 0.2 + 0.10 1.65- 0.05 technical drawings according to DIN specifications 0.85 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 Document Number 83032 Rev. 1.7, 31-Aug-04 4 www.vishay.com 9 TLMG / H / O / P / Y310. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83032 Rev. 1.7, 31-Aug-04 |
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