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| LS421, LS422, LS423, LS424, LS425, LS426 Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE HIGH GAIN LOW POWER OPERATION IG=0.25pA MAX gfs=120mho MIN VGS(off)=2V MAX S1 G2 G1 3 C 4 5 6 D2 S2 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 to +150C Operating Junction Temperature +150C Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 40V 10mA 400mW @ +125C D1 D2 D1 2 S1 1 7 G2 G1 S2 TO-78 BOTTOM VIEW Maximum Power Dissipation Device Dissipation @ Free Air - Total 22 X 20 MILS ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS 10 25 40 10 25 40 V/C VDG= 10V ID= 30A |VGS1-2 /T| max. Drift vs. Temperature TA=-55C to +125C |VGS1-2| max. VGS(off) VGS IGmax. -IGmax. -IGSSmax. -IGSSmax. SYMBOL BVGSS BVGGO Yfss Yfs IDSS Offset Voltage GATE VOLTAGE Pinchoff Voltage Operating Range Operating High Temperature At Full Conduction High Temperature 10 2.0 1.8 .25 250 1.0 1.0 15 2.0 1.8 .25 250 1.0 1.0 25 2.0 1.8 .25 250 1.0 1.0 10 3.0 2.9 .500 500 3.0 3.0 15 3.0 2.9 .500 500 3.0 3.0 25 3.0 2.9 .500 500 3.0 3.0 mV V V pA pA pA nA VDG=10V VDS=10V VDG=10V VDG=10V TA= +125C VDS= 0V TA= +125C VGS= 20V ID= 30A ID= 1nA ID= 30A ID= 30A CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Operation DRAIN CURRENT Full Conduction MIN. 40 40 300 120 60 60 TYP. 60 --200 --- MAX. --1500 350 1000 1800 UNITS V V mho mho A A CONDITIONS VDS= 0 IG= 1nA IG= 1A VDS= 10V VDG= 10V LS421-3 LS424-6 ID= 0 VGS= 0 ID= 30A VDS= 10V IS= 0 f= 1kHz f= 1kHz VGS= 0 Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 * FAX: (510) 353-0261 SYMBOL YOSS YOS CMR CMR CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction Operating COMMON MODE REJECTION -20 log |VGS1-2/VDS| -20 log |VGS1-2/VDS| NOISE Figure Voltage CAPACITANCE Input Reverse Transfer MIN. --- TYP. -0.1 MAX. UNITS 10 3.0 mho mho dB dB CONDITIONS VDS= 10V VDG= 10V VDS= 10 to 20V VDS= 5 to 10V VDG= 10V f= 10Hz VDG= 10V VDG= 10V ID= 30A VGS= 0 ID= 30A ID= 30A ID= 30A RG= 10M --- 90 90 --- NF en --- -20 10 1.0 70 dB nV/Hz ID= 30A f= 10Hz ID= 30A f= 1kHz VGS= 0 VGS= 0 f= 1MHz f= 1MHz CISS CRSS --- --- 3.0 1.5 pF pF VDS= 10V VDS= 10V TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 2 34 1 5 8 76 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45 0.046 0.036 45 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) S1 D1 D1 G1 SS N/C G1 1 2 3 4 8 7 6 5 G2 N/C SS G2 D2 D2 S2 S2 0.228 (5.79) 0.244 (6.20) S1 D1 G1 N/C N/C G2 D2 S2 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 * FAX: (510) 353-0261 |
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