|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Fast Recovery Epitaxial Diode (FRED) DSEI 2x30 DSEI 2x31 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns VRSM V 600 600 VRRM V 600 600 Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Features * * * * * * 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour A A A A C C C W V~ V~ Nm lb.in. g Symbol IFRMS IFAVM IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Conditions Maximum Ratings (per diode) 70 30 375 300 -40...+150 150 -40...+150 TVJ = TVJM TC = 85C; rectangular; d = 0.5 tP < 10 s; rep. rating; pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine Applications * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Low noise switching * Small and light weight TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque (M4) t = 1 min t=1s 100 2500 3000 1.5 - 2.0 14 - 18 18 Conditions TVJ = 25C VR = VRRM TVJ = 25C VR = 0.8 * VRRM TVJ = 125C VR = 0.8 * VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values (per diode) typ. max. 100 50 7 1.4 1.6 1.01 7.1 1.25 0.05 A A mA V V V m K/W K/W ns A mm mm m/s VF VT0 rT RthJC RthCK trr IRM dS dA a For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/s VR = 30 V; TVJ = 25C VR = 350 V; IF = 30 A; -diF/dt = 240 A/s L 0.05 H; TVJ = 100C Creeping distance on surface Creeping distance in air Allowable acceleration 35 10 50 11 min. 11.2 min. 11.2 max. 50 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 139 (c) 2001 IXYS All rights reserved 1-2 DSEI 2x 30-06P DSEI 2x 31-06P D5 Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions in mm (1mm = 0.0394") Fig. 7 Transient thermal impedance junction to case. (c) 2001 IXYS All rights reserved 2-2 |
Price & Availability of DSEI2X30 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |