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| FDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * -16 A, -30 V. RDS(ON) = 7.2 m @ VGS = -10 V RDS(ON) = 11.5 m @ VGS = - 4.5 V * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -30 25 (Note 1a) Units V V A W -16 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W Package Marking and Ordering Information Device Marking FDS7779Z Device FDS7779Z Reel Size 13'' Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS7779Z Rev C1 (W) FDS7779Z Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A,Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25C VGS = -10 V, ID = -16 A VGS = -4.5 V, ID = -15 A VGS= -10 V, ID =-16A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -13 A Min -30 Typ Max Units V Off Characteristics -22 -1 10 mV/C A A On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.5 5 6 9 8 -3 V mV/C 7.2 11.5 11 m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tRR QRR Notes: -50 43 A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 3800 980 490 3 pF pF pF 36 18 160 88 98 ns ns ns ns nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 20 9 100 55 VDS = -15 V, ID = -16 A, VGS = -10 V 70 10 16 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.5 A Voltage IF = -16 A, Reverse Recovery Time diF/dt = 100 A/s Reverse Recovery Charge -2.5 (Note 2) A V ns nC -0.7 39 24 -1.2 (Note 2) 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS7779Z Rev C1 (W) FDS7779Z Typical Characteristics 50 VGS = -10V -6.0V 2.6 -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 -ID, DRAIN CURRENT (A) 45 60 -4.0V -4.5V -5.0V -6.0V -8.0V -10V VGS = - 3.5V -ID, DRAIN CURRENT (A) 40 30 -3.0V 20 10 0 0 0.5 1 1.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = -16A VGS = -10V ID = -8A 0.03 0.02 0.02 TA = 125oC 0.01 TA = 25oC 0.01 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) igure 3. On-Resistance Variation with Temperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 60 TA = -55oC 25oC 125oC 10 VGS = 0V TA = 125oC 1 25oC -55oC 40 0.1 20 0.01 0 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) 4 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7779Z Rev C1 (W) FDS7779Z Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 8 VDS = -10V -20V -15V 5000 CISS 4000 CAPACITANCE (pF) f = 1 MHz VGS = 0 V 6 3000 4 2000 COSS 2 1000 CRSS 0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 10s DC VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25oC P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) 0.01 o 0.1 0.1 0.05 0.02 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS7779Z Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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