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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW trr 200 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C I S IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 68N20 74N20 68N20 74N20 68N20 74N20 Maximum Ratings 200 200 20 30 68 74 272 296 68 74 45 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C g TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S G = Gate, S = Source, D = Drain, TAB = Drain (TAB) Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 1.13/10 Nm/lb.in. Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS= 10 V, I D = 0.5 ID25 Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power surface package High power density 74N20 68N20 Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved 97522C (8/00) IXFH 68N20 IXFH 74N20 IXFT 68N20 IXFT 74N20 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz Characteristic Values Min. Typ. Max. 35 45 5400 1160 560 40 55 120 26 280 39 135 0.25 0.35 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 2 3 TO-247 AD (IXFH) Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 (TO-247 Package) IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/ IXFK80N20 data sheet. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM I F = 25A -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 68N20 74N20 68N20 74N20 68 74 272 296 1.5 200 0.85 8 A A A A V ns mC A TO-268 Outline I F = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
Price & Availability of IXFH74N20
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