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| MMDT2222V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907V) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) ADVANCE INFORMATION A SOT-563 BC Dim A B C D G Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11 Mechanical Data Case: SOT-563, Molded Plastic Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.003 grams (approx.) E1 B1 C1 D G K H M H K L L M B2 E2 All Dimensions in mm C2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Tj, TSTG Value 75 40 6.0 600 -55 to +150 Unit V V V mA C Characteristic Collector Current - Continuous (Note 3) Operating and Storage and Temperature Range Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C unless otherwise specified Symbol Pd RqJA Value 150 833 Unit mW C/W Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30563 Rev. 2 - 0 1 of 4 www.diodes.com MMDT2222V a Diodes Incorporated ADVANCE INFORMATION Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Min 75 40 6.0 3/4 3/4 3/4 3/4 35 50 75 100 40 50 35 3/4 0.6 3/4 3/4 -- 300 3/4 Max 3/4 3/4 3/4 10 10 10 20 3/4 3/4 3/4 300 3/4 3/4 3/4 0.3 1.0 1.2 2.0 8 25 3/4 4.0 Unit V V V nA mA nA nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) V V Cobo Cibo fT NF pF pF MHz dB td tr ts tf 3/4 3/4 3/4 3/4 10 25 225 60 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 4. Short duration test pulse used to minimize self-heating effect. DS30563 Rev. 2 - 0 2 of 4 www.diodes.com MMDT2222V 250 1000 ADVANCE INFORMATION Pd, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 200 TA = 125C 150 100 TA = -25C TA = +25C 100 10 50 VCE = 1.0V 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 1, Derating Curve - Total 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 20 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 Cibo IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50C TA = 25C TA = 150C 0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current DS30563 Rev. 2 - 0 3 of 4 www.diodes.com MMDT2222V 1000 ADVANCE INFORMATION fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 Ordering Information (Note 5) Device MMDT2222V-7 Notes: Packaging SOT-563 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAT YM KAT = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30563 Rev. 2 - 0 4 of 4 www.diodes.com MMDT2222V |
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