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| TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8020-H High-Efficiency DCDC Converter Applications Notebook PC Applications 5.00.2 6.00.3 Unit: mm 0.50.1 8 1.27 0.40.1 5 0.05 M A Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.150.05 1 5.00.2 0.950.05 4 0.595 A 0.1660.05 S 1 0.05 S 4 1.10.2 0.60.1 Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 40 40 20 7.5 30 30 2.8 1.6 26 7.5 1.9 150 -55 to 150 Unit V V V A W W W mJ A mJ C C 8 4.250.2 5 0.80.1 1,2,3SOURCE 5,6,7,8DRAIN 4GATE JEDEC JEITA TOSHIBA 2-5Q1A Drain power dissipation (Tc=25C) Drain power dissipation (t = 10 s) Drain power dissipation (t = 10 s) (Note 2a) (Note 2b) Weight: 0.066 g (typ.) Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range 1 2 3 3.50.2 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPCA8020-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 4.17 Unit C/W Rth (ch-a) 44.6 C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 C/W Marking (Note 5) TPCA 8020-H Type Lot No. Note 1: The channel temperature should not exceed 150C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit : mm) FR-4 25.4 x 25.4 x 0.8 (Unit : mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCA8020-H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr RL = 5.3 10 V VGS 0V 4.7 ID = 3.8 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.8 A VGS = 10 V, ID = 3.8 A VDS = 10 V, ID = 3.8 A Min 40 25 1.1 7.5 VDD 32 VVGS = 10 VID = 7.5 A - Typ. 27 22 15 650 55 240 3 Max 10 10 2.3 35 27 ns 2 nC pF Unit A A V V m S Turn-on time Switching time Fall time ton tf toff 9 VDD 20 V - Duty < 1%, tw = 10 s = VDD 32 VVGS = 10 VID = 7.5 A - VDD 32 VVGS = 5 VID = 7.5 A - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge Gate switching charge 18 11 6.2 2.1 2.7 3.5 Qg Qgs1 Qgd Qsw Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = 7.5 A, VGS = 0 V Min -- -- Typ. -- -- Max 30 -1.2 Unit A V Forward voltage (diode) 3 2006-11-17 TPCA8020-H ID - VDS 10 10 6 3.8 3.4 Common source Ta = 25C Pulse test 20 10 6 4 ID - VDS 3.8 3.6 Common source Ta = 25C Pulse test 3.4 Drain current ID (A) 4.5 6 4 3.1 Drain current ID (A) 8 5 3.2 16 5 4.5 12 3.2 8 3 2.8 VGS = 2.6 V 0 0 3 4 2.9 2.8 2 2.7 VGS = 2.6 V 0 0 0.2 0.4 0.6 0.8 1.0 4 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 VDS - VGS 0.5 25 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25C Pulse test 0.4 Drain current ID (A) 20 0.3 15 0.2 10 ID = 7.5 A 25 100 Ta = -55C 5 0.1 3.8 1.9 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 100 Common source VDS = 10 V Pulse test 100 RDS (ON) - ID Forward transfer admittance |Yfs| Drain-source ON-resistance RDS (ON) (m) 4.5 10 Ta = -55C 25 100 VGS = 10 V 10 1 0.1 0.1 1 10 100 1 0.1 Common source Ta = 25C Pulse test 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPCA8020-H RDS (ON) - Ta 50 100 IDR - VDS Common source Ta = 25C Pulse test (A) Common source Pulse test Drain-source ON-resistance RDS (ON) (m) 40 3.8 ID = 7.5 A 1.9 10 4.5 3 Drain reverse current IDR 10 30 VGS = 4.5 V 20 10 V 10 ID = 7.5 A, 3.8 A, 1.9 A 1 1 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 VGS = 0 V -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 2.5 Vth - Ta Gate threshold voltage Vth (V) (pF) Common source Ta = 25C f = 1 MHz VGS = 0 V 1000 Ciss 2.0 Capacitance C 1.5 100 Coss 1.0 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Crss 0.5 10 0.1 1 10 100 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) Dynamic input/output characteristics 50 Drain-source voltage VDS (V) 40 16 VDS 30 16 12 20 8 VDD = 32 V 8 10 VGS 0 0 4 8 12 16 4 0 20 Total gate charge Qg (nC) Gate-source voltage VGS (V) Common source ID = 7.5 A Ta = 25C Pulse test 20 5 2006-11-17 TPCA8020-H rth - tw rth (C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25 (2) 100 (1) Transient thermal impedance 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD - Ta 3 (1) Device mounted on a glass-epoxy board (a) PD - Tc 50 2.5 (1) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s Drain power dissipation PD (W) (W) Drain power dissipation PD 40 2 30 1.5 (2) 20 1 0.5 10 0 0 40 80 120 160 0 0 40 80 120 160 Ambient temperature Ta (C) Case temperature Tc (C) Safe operating area 100 ID max (Pulse) * Drain current ID (A) 10 ID max (Continuous) DC Opeation Tc = 25C 1 * Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 1 ms * 10 ms * VDSS max 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPCA8020-H 7 2006-11-17 |
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