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FCP22N60N / FCPF22N60NT N-Channel MOSFET
July 2009
FCP22N60N / FCPF22N60NT
N-Channel MOSFET
600V, 22A, 0.165 Features
* RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A * BVDSS>650V @ TJ = 150oC * Ultra Low Gate Charge ( Typ. Qg = 45nC) * Low Effective Output Capacitance * 100% Avalanche Tested * RoHS Compliant
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220 FCP Series
G GDS
TO-220F FCPF series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) 205 1.64 -55 to +150 300 Derate above 25oC (Note 3) Continuous (TC = 25oC) Continuous (TC = 100oC) Pulsed (Note 1) (Note 2) 22 13.8 66 672 7.3 2.75 20 100 39 0.31 FCP22N60N FCPF22N60NT 600 30 22* 13.8* 66* Units V V A A mJ A mJ V/ns W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCP22N60N FCPF22N60NT 0.61 0.5 62.5 3.2 0.5 62.5
oC/W
Units
(c)2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. A2
1
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FCP22N60N FCPF22N60NT Device FCP22N60N FCPF22N60NT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TJ = 25oC ID = 1mA, VGS = 0V, TJ = 150oC ID = 1mA, Referenced to 25oC VDS = 480V, VGS = 0V VDS = 480V, TJ = 125oC VGS = 50V, VDS = 0V 600 650 0.68 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 11A VDS = 20V, ID = 11A 2.0 3 0.140 22 4.0 0.165 V S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 11A, VGS = 10V
(Note 4)
VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V
-
1950 75.9 3 43.2 196.4 45 8.7 14.5 1
-
pF pF pF pF pF nC nC nC
Drain Open, f=1MHz
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 11A RG = 4.7
(Note 4)
-
16.9 16.7 49 4
-
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 11A VGS = 0V, ISD = 11A dIF/dt = 100A/s 350 6 22 66 1.2 A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7.3A, RG = 25, Starting TJ = 25C 3. ISD 22A, di/dt 200A/s, VDD 380V, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCP22N60N / FCPF22N60NT Rev. A2
2
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
10
1
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V
ID,Drain Current[A]
150 C -55 C
o
o
10
25 C
o
0.1
0.3
1 VDS,Drain-Source Voltage[V]
10
1 2 3
*Notes: 1. VDS = 20V 2. 250s Pulse Test
4 5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
0.3
IS, Reverse Drain Current [A]
150 C
o
10
25 C
o
VGS = 10V
0.2
VGS = 20V
0.1 0 10
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
20 30 40 ID, Drain Current [A]
50
60
1 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
1E5
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 300V VDS = 480V
10000
Ciss
8
Capacitances [pF]
1000
Crss
6
100
4
10
*Note: 1. VGS = 0V 2. f = 1MHz
2
*Note: ID = 11A
1 0.1
1 10 100 VDS, Drain-Source Voltage [V]
600
0 0
10 20 30 40 Qg, Total Gate Charge [nC]
50
FCP22N60N / FCPF22N60NT Rev. A2
3
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 11A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area - FCP22N60N
100
10s 100s
Figure 10. Maximum Safe Operating Area - FCPF22N60NT
100
10s
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms 10ms
10
100s 1ms 10ms
1
Operation in This Area is Limited by R DS(on)
DC
1
Operation in This Area is Limited by R DS(on)
100ms
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.01 1
0.01
10 100 VDS, Drain-Source Voltage [V]
1000
1
10 100 VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs.Case Temperature
25
20 ID, Drain Current [A]
15
10
5
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
FCP22N60N / FCPF22N60NT Rev. A2
4
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve - FCP22N60N
1
Thermal Response [Z JC]
0.5
0.2
PDM t1 t2
0.1
0.1 0.05
*Notes:
0.02 0.01 Single pulse
1. ZJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
Figure 13. Transient Thermal Response Curve - FCPF22N60NT
5
Thermal Response [Z JC]
1
0.5
0.2
0.1
0.1
PDM
0.05 0.02
t1 t2
0.01
0.01 Single pulse
*Notes: 1. ZJC(t) = 3.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.001 -5 10
10
-4
10 10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
FCP22N60N / FCPF22N60NT Rev. A2
5
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP22N60N / FCPF22N60NT Rev. A2
6
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as D U T
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d
VGS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FCP22N60N / FCPF22N60NT Rev. A2
7
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220
FCP22N60N / FCPF22N60NT Rev. A2
8
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
FCP22N60N / FCPF22N60NT Rev. A2
9
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FCP22N60N / FCPF22N60NT N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FCP22N60N / FCPF22N60NT Rev. A2
10
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