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TCND3000
Vishay Semiconductors
Reflective Sensor for Touchless Switch
Description
TCND3000 is a reflective optical sensor for applications using the HALIOS(R) (High Ambient Light Independent Optical System) principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a second infrared emitter is used for compensation of disturbing ambient light. Optoelectronic parameters of the sensor are matched to the corresponding integrated circuit E909.01, manufactured by ELMOS Semiconductor AG (www.elmos.de).
Features
* Package type: Surface mount * Detector type: PIN Photodiode * Dimensions: e4 L 4.83 mm x W 2.54 mm x H 2.21 mm * Peak operating distance: 20 mm * Peak operating range: 10 mm to 20 mm * Typical output current under test: IC = 5.6 A * Lead (Pb)-free soldering released * Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Emitter wavelength 885 nm * Daylight blocking filter * Touch distance: 10 mm*) * Proximity distance: 20 mm*) * High ambient light suppression for sunlight: 200 klx * High ambient light suppression for CIE standard illuminant A: 100 klx * Minimum order quantity 800 pcs, 800 pcs/reel *) Using E909.01 interface ASIC and Kodak grey card with 20 % diffuse reflection
Applications
* Optical switches for general purpose
Document Number 84606 Rev. 1.2, 23-Aug-06
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TCND3000
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Sensor
Parameter Power dissipation Storage temperature range Operating temperature range Thermal resistance junction/ambient Soldering temperature acc. figure 7 Test condition Tamb 25 C Symbol PV Tstg Tamb RthJA Tsd Value 180 - 40 to + 100 - 40 to + 85 450 260 Unit mW C C K/W C
IR Emitter LEDS (Transmitter)
Parameter Reverse voltage Forward current Peak forward current Junction temperature Ts = 8 s tps = 4 s Test condition Symbol VRS IFS IFS Tjs Value 5 50 100 105 Unit V mA mA C
IR Emitter LEDC (Compensation)
Parameter Reverse voltage Forward current Peak forward current Junction temperature Ts = 8 s tpc = 4 s Test condition Symbol VRC IFC IFC Tjs Value 5 50 100 105 Unit V mA mA C
Detector
Parameter Reverse voltage Junction temperature Test condition Symbol VRD TjD Value 5 105 Unit V C
200
PV - Power Dissipation (mW)
150
R thJA 100
50
0
0
20
40
60
80
100
Tamb - Ambient Temperature (C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
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Document Number 84606 Rev. 1.2, 23-Aug-06
TCND3000
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Sensor
Parameter Light current Test condition Kodak Grey Card 20 % diffuse reflection distance: 1 cm IFS = 10 mA no reflective medium IFS = 10 mA IFC = 2 mA Symbol ICA Min Typ. 1.2 Max Unit A
Optical crosstalk sensing path Compensation current
ICA ICR
0.9 5
A A
IR Emitter LEDS (Transmitter)
Parameter Forward voltage Reverse voltage Junction capacitance Radiant intensity Angle of half intensity Peak wavelength Spectral bandwidth Virtual source diameter IFS = 10 mA IFS = 10 mA DIN EN ISO 1146/1:2005 IFS = 10 mA tp = 20 ms Test condition IFS = 10 mA tp = 20 ms IRS = 10 A Symbol VFS VRS CjS Ie S ps s O 875 5 50 2 20 885 42 1.4 22 Min Typ. 1.3 Max Unit V V pF mW/sr deg nm nm mm
IR Emitter LEDC (Compensation)
Parameter Forward voltage Reverse voltage Junction capacitance Peak wavelength Spectral bandwidth IFC = 10 mA IFC = 10 mA Test condition IFC = 10 mA tpC = 20 ms IRC = 10 A Symbol VFC VRC CjC pC C 5 50 885 42 Min Typ. 1.3 Max Unit V V pF nm nm
Detector
Parameter Forward voltage Breakdown voltage Reverse dark current Reverse light current Test condition IFD = 50 mA IRD = 100 A E=0 VRD = 10 V, E = 0 Ee = 1 mW/cm = 870 nm VRD = 5 V VRD = 5 V = 870 nm
2
Symbol VFD V(BR) Ir0 Ira
Min 5
Typ. 1.0
Max 1.3
Unit V V
1 5.6
10
nA A
Temp. coefficient of Ira Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth
TKIra D p 0.5
0.2 20 910 790...1020
%/K deg nm nm
Document Number 84606 Rev. 1.2, 23-Aug-06
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TCND3000
Vishay Semiconductors Typical Characteristics
Tamb = 25 C unless otherwise specified
0
10
20
S( )rel - Relative Spectral Responsivity
30
1.2 1.0 0.8 0.6 0.4 0.2 0.0 600
Ie, rel - Relative Radiant Intensity
40 1.0 0.9 0.8 50 60 70 80
0.7
94 8883
0.6
0.4
0.2
0
0.2
0.4
0.6
700
800
900
1000
1100
- Wavelength (nm)
Figure 2. Relative Radiant Intensity vs. Angular Displacement
Figure 4. Relative Spectral Sensitivity vs. Wavelength
0
10
20 30 3.5 3 2.5 I FS = 10 mA 2 1.5 1 Crosstalk Level 0.5 0
Srel - Relative Intensity
40 1.0 0.9 0.8 50 60 70 80
0.7
20181
0.6
0.4
0.2
0
0.2
0.4
ICA- Photocurrent (A)
0.6
1
10
100
d - Distance (mm)
Figure 3. Relative Radiant Sensitivity vs. Angular Displacement
Figure 5. Photocurrent vs. Distance
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Document Number 84606 Rev. 1.2, 23-Aug-06
TCND3000
Vishay Semiconductors Application Circuit
Figure 6. Test circuit
Document Number 84606 Rev. 1.2, 23-Aug-06
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TCND3000
Vishay Semiconductors Dimensions
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Document Number 84606 Rev. 1.2, 23-Aug-06
TCND3000
Vishay Semiconductors Reflow Solder Profiles Drypack
Preheat
280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0
19030
Reflow
Cooling
260 C
250 C 210 C
Temperature (C)
Devices are packed in moisture barrier bags (MBB) to prevent products from moisture absorption during transportation and storage. Each bag contains a desiccant.
145 C 125 C
Floor Life
~ 20 s ~ 30 s ~ 40 s
120 s
30
60
90
120
150
180
210
240
270
300
Time (s)
Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TCND3000 is released for: Moisture Sensitivity Level 4, according to JEDEC, J-STD-020. Floor Life: 72 h Conditions: Tamb < 30 C, RH < 60 %
Figure 7. Lead (Pb)-Free (Sn) Reflow Solder Profile
Drying
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C ( 5 C), RH < 5 % or 96 h at 65 C ( 5 C), RH < 5 %.
300
max. 240 C ca. 230 C
948625
10s
250
Temperature (C)
200
215 C
150 100 50
2 K/s - 4 K/s full line dotted : typical :process limits max. 160 C 90s - 120s
max 40s
Lead Temperature
0 0 50 100 150 200 250
Time (s)
Figure 8. Lead Tin (SnPb) Reflow Solder Profile
Document Number 84606 Rev. 1.2, 23-Aug-06
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TCND3000
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 84606 Rev. 1.2, 23-Aug-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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