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1310 nm FP diode chip specification 1. Feature: VCSEL/LD Division a) Low Threshold Current b) Modulation Capability up to 1.25Gbps c) All diode 100% test 2. Application: Telecommunications Fiber Optic Sensors Cable Television Fiber Channel e) ATM transceiver modules and system 3. Part Number: LB-CMSF 4. Optical and Electrical Characteristics Parameter Symbol Min. TYP. Threshold Current Operation Current Operation Voltage Slope Efficiency Center Wavelength Rise / Fall Time Spectra Width Beam Divergence (Full angle at half width) Beam Divergence (Full angle at half width) 5. Maximum Ratings Parameter Optical Output Power Reverse Voltage (LD) Operation Temperature Storage Temperature 6. Physical dimension Parameter Die Length Die Width Die Height Ith Iop Vop c tr / tf 10 22 1.15 0.43 1310 80 1 15 40 Max. 15 30 1.5 1330 120 3 Unit mA mA V mW/mA a) b) c) d) Chip: P-side Pattern 0.35 1290 nm ps nm deg deg Test Condition CW. 1/2 (dP/dI) Peak CW. P0=5mW CW. P0=5mW CW. P0=5mW CW. P0=5mW CW. P0=5mW (FWHM) CW. P0=5mW (parallel) CW. P0=5mW (perpendicular) Unit: um Min. -40 -40 Typ 250 300 120 Max. 10 2 +85 +125 Unit um um um Unit mV V C C Note. These specifications are subject to change without notice. Tel: 323-278-0820 Website: www.axt.com\vcsel Fax: 323-278-0096 Email: vcsel@axt.com m LB-CMSF Rev. B |
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