to ? 92 1.emitter 2. collector 3.base to-92 plastic-encapsulate transistors 3DG3332 transistor (npn) features z low current z high voltage applications z video z telephony z professional communication equipment maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 180 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 160 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 6 v collector cut-off current i cbo v cb =120v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =5v, i c =100ma 100 400 dc current gain h fe(2) v ce =5v, i c =10ma 80 collector-emitter saturation voltage v ce(sat)(1) i c =250ma,i b =25ma 0.4 v base-emitter saturation voltage v be (sat) i c =250ma,i b =25ma 1.2 v transition frequency f t v ce =10v,i c =50ma 120 mhz collector output capacitance c ob v cb =10v,i e =0, f=1mhz 8 pf classification of h fe(1) rank r s t range 100-200 140-280 200-400 symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current 0.7 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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