AM3459P these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) ( ? )i d (a) 0.310 @ v gs = -10v 2.1 0.465 @ v gs = -4.5v 1.7 product summary -60 ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability ? extended vgs range (25) for battery pack applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds -60 v gs 20 t a =25 o c2.1 t a =70 o c1.7 i dm 15 i s -1.7 a t a =25 o c2.0 t a =70 o c1.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1 2 34 5 6 symbol maximum units 62.5 o c/w 110 o c/w thermal resistance ratings parameter maximum junction-to-ambient a t <= 5 sec r ja 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -48 v, v gs = 0 v -1 v ds = -48 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -20 a v gs = -10 v, i d = -2.1 a 310 v gs = -4.5 v, i d = -1.7 a 465 forward tranconductance a g fs v ds = -15 v, i d = -2.1 a 8 s diode forward voltage v sd i s = -2.5 a, v gs = 0 v -1.2 v total gate charge q g 18 gate-source charge q gs 5 gate-drain charge q gd 2 turn-on delay time t d(on) 8 ris e time t r 10 turn-off delay time t d(off) 35 fall-time t f 12 d y namic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static te s t conditions symbol drain-source on-resistance a r ds(on) v dd = -30 v, r l = 30 ? , id = -1 a, vgen = -10 v, rg = 6 ? ns v ds = -30 v, v gs = -4.5 v, i d = -2.1 a nc m ? parameter limits unit 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3459P product specification
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