tm FFPF04S60S 4 a, 600 v, stealth? ii diode ?2007 fairchild semiconductor corporation FFPF04S60S rev. a www.fairchildsemi.com 1 FFPF04S60S features ? stealth recovery t rr = 25 ns (@ i f = 4 a) ? max forward voltage, v f = 2.6 v (@ t c = 25c) ? 600 v reverse v oltage and high reliability applications ? general purpose ? switching mode power supply ? ? power switching circuits 4 a, 600 v, stealth? ii diode the FFPF04S60S is a stealth? ii diode with soft recovery characteristics. it is silic on nitride pass ivated ion-implanted epitaxial planar construction. this dev ice is intended for use as freewheeling of boos t diode in switching power supplies and other power swithching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switc hing circuits reducing power loss in the switching transistors. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 116 o c 4 a i fsm non-repetitive peak surge current 60hz single half-sine wave 40 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 6.8 o c/w device marking device package reel size tape width quantity f04s60s FFPF04S60Stu to-220f-2l - - 50 1. cathode 2. anode 1. cathode 2. anode to-220f-2l october 2007 ? avalanche energy rated ? rohs compliant boost diode in continuous mode power factor corrections
FFPF04S60S 4 a, 600 v, stealth? ii diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 4 a i f = 4 a t c = 25 o c t c = 125 o c - - 2.2 1.7 2.6 - v i r 1 v r = 6 00 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i f = 1 a, di/d t = 100 a/s, v r = 30 v t c = 25 o c - 16 23 ns t rr i rr s factor q rr i f = 4 a, di/d t = 200 a/s, v r = 390 v t c = 25 o c - - - - 18 2 0.7 18 25 - - - ns a nc t rr i rr s factor q rr i f = 4 a, di/d t = 200 a/s, v r = 390 v t c = 125 o c - - - - 45 2.8 1.8 64 - - - - ns a nc w avl avalan che energy ( l = 40 mh) 10 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2007 fairchild semiconductor corporation FFPF04S60S rev. a
FFPF04S60S 4 a, 600 v, stealth? ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/d t figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 t c = 75 o c t c = 25 o c t c = 125 o c reverse current , i r [ a ] reverse voltage, v r [v] 10 40 012345 0.1 1 10 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] 25 o c 50 0.1 1 10 100 0 10 20 30 40 50 typical capacitance at 0v = 43 pf capacitances , cj [pf] reverse voltage, v r [v] 100 200 300 400 500 600 10 20 30 40 50 60 t c = 75 o c t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 25 50 75 100 125 150 0 3 6 9 12 average forward current, i f(av) [a] case temperature, t c [ o c ] 100 200 300 400 500 600 1 2 3 4 5 6 7 t c = 125 o c t c = 25 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [ a/ s ] ?2007 fairchild semiconductor corporation FFPF04S60S rev. a
FFPF04S60S 4 a, 600 v, stealth? ii diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to-220f 2l 2.54 0.2 0 0.80 0.10 0.35 0.10 2.76 0.2 0 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 ?2007 fairchild semiconductor corporation FFPF04S60S rev. a
FFPF04S60S 4 a, 600 v, stealth? ii diode www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FFPF04S60S rev. a
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