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IRF[International Rectifier]
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| Part No. |
IRFM360
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| OCR Text |
...r to the last page 23 14 92 250 2.0 20 980 23 25 4.0 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical)
Units A
W
W/C
...7mH Peak IL = 23A, VGS = 10V
ISD 23A, di/dt 170A/s,
VDD 400V, TJ 150C
Pulse width 300 ... |
| Description |
400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY
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| File Size |
511.44K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB5B120KD
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| OCR Text |
...el Operation.
VCE(on) typ. = 2.75V
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ T C...7mH 880 Ls = 150nH TJ = 25C CT4 29 IC = 6.0A, VCC = 600V 27 VGE = 15V, RG = 50 L =3.7mH 120 ns Ls =... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
222.92K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHY67C30CM IRHY63C30CM
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| OCR Text |
...otes refer to the last page 3.4 2.1 13.6 75 0.6 20 97 3.4 7.5 8.1 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
...7mH Peak IL = 3.4A, VGS = 12V A ISD 3.4A, di/dt 560A/s, VDD 600V, TJ 150C
A Pulse width 300 ... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
193.94K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL530NS IRL530NSTRR
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| OCR Text |
...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL530NL) is available for lowprofile...7mH
RG = 25, IAS = 9.0A. (See Figure 12)
ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS,
TJ 175C ** ... |
| Description |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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| File Size |
277.67K /
10 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M54671SP M54671
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| OCR Text |
2-PHASE STEPPER MOTOR DRIVER
DESCRIPTION
The M54671SP is a semiconductor IC to drive a bipolar stepper motor directly by controlling the...7mH / 6 / phase)
M54671SP
RS1, RC1, CC1, RT1, CT1,
RS2 = 0.5 RC2 = 1k CC2 = 820pF RT2 = 47k... |
| Description |
From old datasheet system
2-PHASE STEPPER MOTOR DRIVER
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| File Size |
103.46K /
5 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2317
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| OCR Text |
...- - 1.09 1.77 - 1.43 15 0.5 1.8 2.2 - 2.8 - - V s s V V IEBO TJ = +25C TJ = +125C VCE = 500V, VBE = 0 450 - - - - - - - - - - 1 5 1 50 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit
VCE = 450V, IB = 0 IC = 0, VEB = 5V
Switching... |
| Description |
Silicon NPN Transistor High Voltage Fast Switching Power Darlington
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| File Size |
27.71K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2371
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| OCR Text |
...le Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ Avalanche Curren...7mH, RG = 25, IAS = 19A ISD 19A, di/dt 200A/s, VDD V(BR)DSS, TJ +175C Pules Width 300s, Duty Cy... |
| Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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| File Size |
27.30K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2373
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| OCR Text |
...le Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ Avalanche Curren...7mH, RG = 25, IAS = 11A ISD 11A, di/dt 150A/s, VDD V(BR)DSS, TJ +150C Pules Width 300s, Duty Cy... |
| Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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| File Size |
27.43K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2374
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| OCR Text |
...le Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 580mJ Avalanche Curren...7mH, RG = 25, IAS = 18A ISD 18A, di/dt 150A/s, VDD V(BR)DSS, TJ +150C Pules Width 300s, Duty Cy... |
| Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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| File Size |
27.33K /
3 Page |
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it Online |
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