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Sanyo
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Part No. |
2SA1813 0156
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OCR Text |
...ller and slimmer. * Adoption of fbet process. * High DC current gain (hFE=500 to 1200). * Low collector-to-emitter saturation voltage (VCE(sat)0.3V). * High VEBO (VEBO15V).
Package Dimensions
unit:mm
2059A
[2SA1813]
1 : Base 2 : ... |
Description |
PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications From old datasheet system PNP Epitaxial Planar Silicon Transistors
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File Size |
82.26K /
3 Page |
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it Online |
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Sanyo
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Part No. |
2SA1814 0157
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OCR Text |
...ller and slimmer. * Adoption of fbet process. * High DC current gain (hFE=500 to 1200). * Low collector-to-emitter saturation voltage (VCEO(sat)0.3V). * High VEBO (VEBO15V).
Package Dimensions
unit:mm 2018B
[2SA1814]
1 : Base 2 : Em... |
Description |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications From old datasheet system
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File Size |
83.67K /
3 Page |
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it Online |
Download Datasheet |
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Sanyo
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Part No. |
2SA1898 0180
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OCR Text |
...898]
Features
* Adoption of fbet and MBIT processes. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed.
1 : Base 2 : Collector 3 :Emitter SANYO : PCP (Bottom view)
Specifications
Abso... |
Description |
PNP Epitaxial Planar Silicon Transistor DC/DC Converter Application From old datasheet system PNP Epitaxial Planar Silicon Transistors
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File Size |
96.55K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SC3000 0275
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OCR Text |
fbet series. * High fT and small Cre.
Package Dimensions
unit:mm 2003A
[2SC3000]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em... |
Description |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications From old datasheet system
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File Size |
165.96K /
5 Page |
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it Online |
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Sanyo
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Part No. |
2SC4519 0520
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OCR Text |
...ations
Features
* Adoption of fbet process. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small-sized package.
Package Dimensions
unit:mm 2018A
[2SC4519]
0.5
0.4 3 0.16
0~0.1
0.5
1
0.95 0.95 2... |
Description |
High-Definition CRT Display
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications From old datasheet system
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File Size |
84.68K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SA1641 0111
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OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * Low saturation voltage. * Fast switching speed. * Large current capacity. * Small and slim package making it easy to make 2SA1641-used set smaller.
Package Dimensions
unit:mm 2045B... |
Description |
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications From old datasheet system
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File Size |
95.21K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SB1122 0717
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OCR Text |
...622]
Features
* Adoption of fbet process.. * Very small size making it easy to provide highdensity hybrid IC's.
E : Emitter C : Collector B : Base
( ) : 2SB1122
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Co... |
Description |
PNP/NPN Epitaxial Planar Silicon Transistors From old datasheet system
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File Size |
136.83K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SC3393 0050
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OCR Text |
...city and high fT. * Adoption of fbet process.
Package Dimensions
unit:mm 2033A
[2SA1339/2SC3393]
4.0 2.2
0.4 0.5
0.6
0.4
1.8 15.0
3.0
0.4
12 1.3
3 1.3
( ) : 2SA1339
Specifications
Absolute Maximum Ratings ... |
Description |
PNP/NPN Epitaxial Planar Silicon Transistors From old datasheet system
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File Size |
48.67K /
5 Page |
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it Online |
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Sanyo
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Part No. |
2SC3951 2SA1536 0097
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OCR Text |
...NP and NPN types. * Adoption of fbet process. * Micaless type. ( ) : 2SA1536
4.0 1.0
3.3
3.0
1.5 7.5
1.6 0.8
3.0
0.8 0.75
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings at Ta = 25C
... |
Description |
PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications From old datasheet system PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
39.79K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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Part No. |
2SK2171 1023
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OCR Text |
...ations
Features
* Adoption of fbet process. * Large | yfs |. * Small Ciss. * High PD allowable power dissipation.
Package Dimensions
unit:mm 2125
[2SK2171]
4.5 1.6 1.5
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5 4.25max
... |
Description |
N-Channel Junction Silicon FET From old datasheet system
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File Size |
178.68K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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