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SANYO
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| Part No. |
2SC2909
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| OCR Text |
...ations
Features
* Adoption of fbet process. * High breakdown voltage. * Excellent linearity of hFE and small Cob. * Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 1... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications
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| File Size |
50.00K /
5 Page |
 View
it Online |
Download Datasheet
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SANYO
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| Part No. |
2SC5569
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| OCR Text |
... 1.5
Features
* Adoption of fbet and MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package facilitales miniaturization in end products. * High allowable p... |
| Description |
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
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| File Size |
54.87K /
6 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SA1450 2SC3708
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| OCR Text |
...ations
Features
* Adoption of fbet process. * AF amp, AF power amp. * High breakdown voltage : VCEO>80V
Package Dimensions
unit:mm 2003A
[2SA1450/2SC3708]
( ) : 2SA1450
Specifications
Absolute Maximum Ratings at Ta = 25C
Para... |
| Description |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications
NPN Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications
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| File Size |
132.05K /
5 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC5979
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| OCR Text |
...res
* * * * * *
Adoption of fbet, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.
Specifications
Absolute Maximum Ratings... |
| Description |
Low-Saturation Voltage Transistors
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| File Size |
44.96K /
5 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SA1352
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| OCR Text |
...PN), 1.7pF (PNP). * Adoption of fbet process.
JEDEC : TO-126
( ) : 2SA1352
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur... |
| Description |
Ultrahigh-Definition CRT Display Video Output Applications
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| File Size |
154.35K /
5 Page |
View
it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC3495
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| OCR Text |
...495]
Features
* Adoption of fbet process. * High DC current gain (hFE=500 to 2000). * High breakdown voltage (VCEO100V). * Low collector-to-emitter saturation voltage (VCE(sat)0.5V). * High VEBO (VEBO15V). * Small Cob (Cob=1.8pF typ).
... |
| Description |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
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| File Size |
96.51K /
4 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC4488
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * High breakdown voltage, large current capacity. * Fast switching speed.
Package Dimensions
unit:mm 2064
[2SA1708/2SC4488]
( ) : 2SA1708
E : Emitter C : Collector B : Base SA... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
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| File Size |
158.32K /
6 Page |
View
it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SD1348
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| OCR Text |
...348]
Features
* Adoption of fbet and MBIT processes. * Low saturation voltage. * High current capacity and wide ASO.
( ) : 2SB986
JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base ... |
| Description |
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
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| File Size |
128.46K /
4 Page |
View
it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC3648
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| OCR Text |
...648]
Features
* Adoption of fbet, MBIT processes. * High breakdown voltage and large current capacity. * Fast switching speed. * Very small size marking it easy to provide highdensity, small-sized hybrid ICs.
E : Emitter C : Collecto... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Predriver Applications
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| File Size |
124.34K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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