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    NVMD6P02 NVMD6P02R2G NTMD6P02R2G NTMD6P02R2SG

ON Semiconductor
Part No. NVMD6P02 NVMD6P02R2G NTMD6P02R2G NTMD6P02R2SG
OCR Text ... , t stg ? 55 to +150 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = ? 20 vdc, v gs = ? 5.0 vdc, peak i l = ? 5.0 apk, l = 40 mh, r g = 25 ) e as 500 mj maximum lead temperature for solderin...
Description Power MOSFET 6 A, 20 V, P?Channel SOIC?, Dual

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...ctor Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 4.8 Note : The emitter and base are reversely assigned to those of our standard products enc...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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    NTQD4154Z

ON Semiconductor
Part No. NTQD4154Z
OCR Text ...a 0.32 t b 0.7 q rr 11.6 c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. ntqd4154z http://onsemi.com 3 typical performance curves (t j = 25 ...
Description Power MOSFET 20 V, 7.5 A, Common-Drain, Dual N-Channel TSSOP-8

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    NTQD4154Z

ON SEMICONDUCTOR
Part No. NTQD4154Z
OCR Text ... = 6.5 a 0.7 q rr 11.6 c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. ntqd4154z http://onsemi.com 3 typical performance curves (t j = 25 ...
Description 7.5 A, 20 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 65.73K  /  6 Page

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    FreesCale
Part No. MC4828
OCR Text ...ed on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature power dissipation a t <= 10 sec steady state r ja i d a p d w gate-source voltage product summary 60 r ds(on) (m) 89 @ v gs = 10v 104 @ v gs = 4.5v pu...
Description N-Channel 60-V (D-S) MOSFET

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Part No. KM644002BJ-12000
OCR Text ...ge. * v il (min) = -2.0v a.c(pulse width 8ns) for i 20ma ** v ih (max) = v cc + 2.0v a.c (pulse width 8ns) for i 20ma parameter symbol min typ max unit supply voltage v cc 4.5 5.0 5.5 v ground v ss 0 0 0 v input high v...
Description 1M X 4 STANDARD SRAM, 12 ns, PDSO32

File Size 186.11K  /  8 Page

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Part No. BRA143EMP
OCR Text ...age vs. output current r l = 0 pulse test i i = ?0.1 ma ?0.2 ?0.3 ?0.4 ?0.5 ?0.6 ?0.7 ?0.8 ?0.9 ?1.0 v cc = ?5 v r l = 0 pulse test i o / i i = 20 pulse test v cc = ?5 v r l = 0 pulse test v cc = ?0.3 v r l = 0 pulse test ta = ?25...
Description 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 107.41K  /  12 Page

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    ATP304-TL-H

ON Semiconductor
Part No. ATP304-TL-H
OCR Text ... i d -100 a drain current (pulse) i dp pw 10 s, duty cycle 1% -400 a allowable power dissipation p d tc=25 c 90 w channel temperature tch 150 c storage temperature tstg - 55 to +150 c avalanche energy (single puls...
Description P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK
   P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK

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    AP04N70BI-A-HF14 AP04N70BI-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP04N70BI-A-HF14 AP04N70BI-A-HF-14
OCR Text ... dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 3.8 /w rthj-a maximum the...
Description Fast Switching Characteristic

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