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    SIHF740STRL-GE3

VISHAY SILICONIX
Part No. SIHF740STRL-GE3
OCR Text ...on. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 9.1 mh, r g = 25 ? , i as = 10 a (see fig. 12). c. i sd ? 10a, di/dt ? 120 a/s, v dd ? ...
Description 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 172.37K  /  9 Page

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    2SA715

HITACHI[Hitachi Semiconductor]
Part No. 2SA715
OCR Text ...-0.5 A VCE = -2 V, IC = -1.5 A (pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 28.86K  /  5 Page

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    SI2304BDS08

Vishay Siliconix
Part No. SI2304BDS08
OCR Text ...nted on fr4 board, t 5 s. b. pulse width limited by maximum junction temperature. c. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm absolute maximum ratings...
Description N-Channel 30-V (D-S) MOSFET

File Size 109.99K  /  5 Page

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Part No. MPG4364K
OCR Text ... i frm measurement condition : pulse width Q 1ms., duty Q 1/20. (ta=25 ) mb g mp g mp y ma y ma a mv r b r mp r power dissipation p d 70 70 85 85 70 75 100 75 mw f orward current i f 25 25 30 30 25 30 50 30 ma pulse forward current 1 ...
Description SINGLE COLOR LED, GREEN, 4 mm

File Size 413.25K  /  33 Page

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    2SA743 2SA743A

HITACHI[Hitachi Semiconductor]
Part No. 2SA743 2SA743A
OCR Text ...= -50 mA VCE = -4 V, IC = -1 A (pulse) VCE = -4 V, IC = -50 mA I C = -1 A, IB = -0.1 A VCE = -4 V, IC = -30 mA -0.65 -1.0 -0.75 -1.5 120 -- -0.65 1.0 -0.75 -1.5 120 -- Gain bandwidth product f T Note: B 60 to 120 1. The 2SA743 a...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.46K  /  6 Page

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Part No. MBRS140TRPBF
OCR Text ...tive 380 a 5s sine or 3s rect. pulse surge current 40 10ms sine or 6ms rect. pulse e as non- repetitive avalanche energy 3.0 mj t j = 25 c, i as = 1a, l = 6mh i ar repetitive avalanche current 1.0 a current decaying linearly to zer...
Description 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA

File Size 127.85K  /  7 Page

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Part No. K4E151611C-TC50
OCR Text ...5ns(3.3v), v cc +2.0v/20ns(5v), pulse width is measured at v cc *2 : -1.3v/15ns(3.3v), -2.0v/20ns(5v), pulse width is measured at v ss parameter symbol 3.3v 5v units min typ max min typ max supply voltage v cc 3.0 3.3 3.6 4.5 5.0 5.5 v ...
Description 1M X 16 EDO DRAM, 50 ns, PDSO44

File Size 558.18K  /  35 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. FCSP240LTR
OCR Text ...ky barrier rectifier note (1) pulse width < 300 s, duty cycle < 2 % notes (1) thermal runaway condition for a diode on its own heatsink (2) mounted 1" square pcb absolute maximum ratings parameter symbol test conditions values units maxi...
Description 1.5 A, 40 V, SILICON, RECTIFIER DIODE

File Size 132.59K  /  6 Page

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