PART |
Description |
Maker |
FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
STB40NF10L 7743 |
N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET POWER MOSFET N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET From old datasheet system N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
STB24NF1006 STP24NF10 B24NF10 P24NF10 STB24NF10 |
26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
XAL1060-472ME XAL1060-122ME XAL1060-181ME XAL1060- |
High Temperature Shielded Power Inductors Shielded Power Inductors ?XAL1060
|
Coilcraft lnc.
|
XAL5030-161ME XAL5050-103ME XAL5050-562ME XAL5050- |
High Temperature Shielded Power Inductors Shielded Power Inductors ?XAL50xx
|
Coilcraft lnc.
|
STP14NF10 STP14NF10FP STB14NF10 |
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFET N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET?/a> II POWER MOSFET N-CHANNEL Power MOSFET N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFETII POWER MOSFET N沟道100V 0.115欧姆-5A TO-220/TO-220FP/D2PAK低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
AP9928GEM |
7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Capable of 2.5V gate drive, Surface mount package
|
Advanced Power Electronics Corp.
|
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