
	Part Number	Hot Search : 24LC2 FM102SPT BSS83P 527184XO GP2Y1 FM102SPT 3410A GAANU
	Product Description
	Full Text Search

W4NRD0X-0000 - Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD0X-0000_8314348.PDF Datasheet


Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page
Maker	CREE POWER
Homepage
Download	[ W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0 Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0 Datasheet PDF Downlaod from Datasheet.HK ] [W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0 Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for W4NRD0X-0000 ] [ Price & Availability of W4NRD0X-0000 by FindChips.com ]

Full text search : Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Related Part Number

PART	Description	Maker
EL8302IS-T13 EL8302 EL8302IS EL8302IS-T7 EL8302ISZ	Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Body Diameter:8mm; Body Length:6.2mm RoHS Compliant: Yes Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:35VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Body Diameter:8mm; Body Length:10.2mm RoHS Compliant: No 500MHz Rail-to-Rail Amplifier	音频／视频放 Intersil Corporation
RAD-WHA-MKT	Mounting kit for WirelessHART adaptor (RAD-WHA-1/2NPT). Allows attachment to a pipe 38 to 89 mm diameter (1.5 to 3.5-inch diameter) or a flat surface, such as a panel.	PHOENIX CONTACT
MAF84X1 MAB84X1 MAF84AX1	Shrink Tubing; Tubing Size Diameter:1"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.035"; Inner Diameter Max Recovered:0.500"; Expanded Inner Diameter:1.000"; Material:Polyolefin; Approval Bodies:UL, CSA 单芯位微控制 SINGLE CHIP 8 BIT MICROCONTROLLER	Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
PE1001-4	Hermetic Seal Solder Contact With 0.02 Pin Diameter, 0.158 Body Diameter And 0.07 Pin Length	Pasternack Enterprises, Inc.
0643241139 643241139	2.80mm (.110), CMC CP Female Terminal, Tin plated; Selective 1.27μm Gold inContact Area, for Tab Dimensions 2.8mm x 0.8mm , Wire Size 1mm2 to 2mm2	Molex Electronics Ltd.
OSR7CA56A1A	4.8mm Straw Red LED 4.8mm Straw Standard Directivity High Luminous LEDs	OptoSupply International
OSV5YL8131A	8mm Round Violet LED 8mm Round Standard Directivity High Luminous LEDs	http://
HEDS-6500-A05 HEDS-6500-A10 HEDS-6500-A11 HEDS-650	HEDS-6510#005 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDS-6505#B05 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDS-6500#A05 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDM-6500#T05 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDM-6505#T05 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDL-6545#B09 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDL-6540#B11 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders HEDM-6540#T11 · Large Diameter (56mm), Housed Two and Three Channel Optical Encoders Large Diameter (56 mm), Housed Two and Three Channel Optical Enco	Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
DC0000086	Federleiste 8mm SMD, 50 polig Female 8mm SMD, 50 contacts	ERNI Electronics
19-09-1091	.093 Diameter Connectors.093 Diameter Connector Housings With Mounting Ears & Detent, Panel Mount9 Receptacle 9 CONTACT(S), FEMALE, POWER CONNECTOR	Molex, Inc.
0643241149	2.80mm (.110), CMC CP Female Terminal, Tin plated, Selective 1.27μm Gold inContact Area, for Tab Dimensions 2.8mm x 0.8mm , Wire Size 0.50mm2 to 1mm2 2.80mm (.110"), CMC CP Female Terminal, Tin plated, Selective 1.27渭m Gold inContact Area, for Tab Dimensions 2.8mm x 0.8mm , Wire Size 0.50mm虏 to 1mm虏	Molex Electronics Ltd.

Related keyword From Full Text Search System

W4NRD0X-0000 sonardyne	W4NRD0X-0000 led	W4NRD0X-0000 Manufacturer	W4NRD0X-0000 mosfet	W4NRD0X-0000 mosfet
W4NRD0X-0000 micro	W4NRD0X-0000 sanyo	W4NRD0X-0000 specification	W4NRD0X-0000 availability	W4NRD0X-0000 array

Price & Availability of W4NRD0X-0000

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

0.46675300598145