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4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 141 Search Time::1.828ms
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				Infineon Technologies AG
Part No.	IKP15N60T
OCR Text	...ge(th) i c =210a, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 ...6mj e ts * e off ) e on and e ts include losses due to diode recovery e on e , switching ...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	391.31K / 13 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXSR35N120BD1
OCR Text	... of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,48...6mj t d(off) 240 ns t fi 340 ns e off 9mj r thjc 0.5 k/w r thck 0.15 k/w reverse diode (fred) charac...
Description	IGBT with Diode(VCES200V，VCE(sat).6V的绝缘栅双极晶体管（带二极管
File Size	56.24K / 2 Page	View it Online	Download Datasheet

				http://
Part No.	SPP11N60CFD07
OCR Text	...s(th) i d =500 ? v gs = v ds 3 4 5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 1.1 900 - - a gate-s...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) paramete...
Description	Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
File Size	331.53K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IHW20T120
OCR Text	...Unit Power Semiconductors 4 Rev. 2 Apr-04 IHW20T120 Soft Switching Series 70A 60A t p =2s T C =80C IC, COLLECTOR C...6mJ ) E on a n d E ts in c lu d e lo s s e s 5mJ d u e to d io d e re c o v e ry ) E on and E t...
Description	IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack Soft Switching Series
File Size	316.12K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW11N60S5
OCR Text	...25C, Tj=150C Values typ. 700 4.5 0.34 0.92 29 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=11A A 25 250 100 0.38 nA Gate-sou...6mJ 300 V W V(BR)DSS 680 PAR 660 640 200 150 620 600 580 50 560 540 -60 04 ...
Description	for lowest Conduction Losses Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	248.05K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] http://
Part No.	11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
OCR Text	...ld - C Values typ. 700 4.5 0.34 0.92 29 max. 5.5 600 3.5 - Unit V V DS=600V, VGS=0V, Tj=25C, Tj=150C A 25 250 100 0.38 nA ...6mJ 300 V W V(BR)DSS 680 PAR 660 640 200 150 620 600 580 50 560 540 -60 04 ...
Description	for lowest Conduction Losses Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
File Size	331.61K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SGW10N60 SGW10N60A SGB10N60A SGP10N60A
OCR Text	...Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 5 Unit V A 40 1500 100 660 75 51 68 A nC nH nA S pF IGE...6mJ 0.1 0.05 0.02 0,4mJ E ts* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 4....
Description	Fast IGBT in NPT-technology IGBTs & DuoPacks - 10A 600V TO220AB IGBT IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 10A 600V TO247AC IGBT
File Size	397.18K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSL314PE
OCR Text	4.5v rated) ? esd protected ? qualified according aec q101 ? 100% lead-free; rohs compliant maximum ratings, at t j =25 c, unless otherwis...6mj reverse diode d v /d t d v /d t i d =-1.5 a, v ds =-16 v, d i /d t =-200a/s, t j,max =150 c 6...
Description	OptiMOS?P 3 Small-Signal-Transistor
File Size	236.44K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPI11N60CFD
OCR Text	...(th) i d =500 , v gs = v ds 3 4 5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 1.1 900 - - a gate-s...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) paramete...
Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
File Size	549.04K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPI11N60S5 SPP11N60S5 SPP11N60S509
OCR Text	... ) i d =500 ? , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - - - 25 250 a gat...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) paramete...
Description	Cool MOS Power Transistor Feature New revolutionary high voltage technology
File Size	470.02K / 12 Page	View it Online	Download Datasheet

For 4.6mj Found Datasheets File :: 141 Search Time::1.828ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |