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  4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 141    Search Time::1.454ms    
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    INFINEON
Part No. IHW40N60T
OCR Text ... f= 1 MH z V C C = 48 0 V, I C =4 0 A V G E = 15 V IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 40 A 4.1 600 Symbol Conditi...6mJ 0.4mJ 0.2mJ 0.0mJ 25C 1.5mJ Eoff 1.0mJ 0.5mJ 50C 75C 100C 125C 150C 0.0mJ 3...
Description Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

File Size 381.86K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4521 IGW60T120
OCR Text ... V V C E = 20 V , I C = 60 A 30 4 0.6 6.0 600 nA S 5.0 1.9 2.1 2.3 5.8 2.4 6.5 mA 1200 V Symbol Conditions Value min. typ. max. Unit RthJA ...6mJ 4mJ E off E, SWITCHING ENERGY LOSSES 20mJ 15mJ Ets* 10mJ E on* Eoff 5mJ ...
Description IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技

File Size 404.35K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4654 IGA03N120H2 Q67040-S4648
OCR Text ...220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwise speci...6mJ 0.5mJ Eoff 0.5mJ 0.4mJ Eon 1 0.3mJ Eoff Eon 1 0.2mJ 0.0mJ 0A 2A 4A ...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak
HighSpeed 2-Technology

File Size 198.98K  /  10 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4655 IKA03N120H2 Q67040-S4649
OCR Text ...hJA P-TO-220-3-31 P-TO-220-3-34 4.3 5.8 62 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwis...6mJ 0.5mJ Eoff 0.5mJ 0.4mJ Eon 1 0.3mJ Eoff Eon 1 0.2mJ 0.0mJ 0A 2A 4A ...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125

File Size 332.84K  /  14 Page

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    IHW30N120R

Infineon Technologies AG
Part No. IHW30N120R
OCR Text ...5 2500 100 nA S 5.1 1.3 1.35 1.4 5.8 1.5 6.4 A 1.55 1.75 1.85 1.75 1200 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.37 ...6mJ 4 mJ 3 mJ 4mJ Eoff 2 mJ 2mJ Eoff 1 mJ 0mJ 10A 20A 30A 40A 50A 0 mJ...
Description IGBT with monolithic body diode for soft switching Applications

File Size 1,001.42K  /  12 Page

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    IHW15N120R2

Infineon Technologies AG
Part No. IHW15N120R2
OCR Text ...S 5.1 1.45 1.55 1.6 5.8 1.65 6.4 A 1.5 1.7 1.8 1.75 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJCD 0.47 RthJC 0.52 K/W ...6mJ 0.4mJ 0.2mJ 0.0mJ 25C Eoff E, SWITCHING ENERGY LOSSES 1.0mJ 0.5mJ 50C 75C 100C...
Description Reverse Conducting IGBT with monolithic body diode

File Size 361.77K  /  12 Page

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    IGP10N60T

Infineon Technologies A...
Infineon Technologies AG
Part No. IGP10N60T
OCR Text ... Conditions Value min. 600 4.1 typ. 1.5 1.8 4.6 max. 2.05 5.7 Unit V A 6 none 40 1000 100 nA S IGES gfs RGint V C E = 0...6mJ due to diode recovery *) E on and E ts include losses due to diode recovery E, SWITCHING E...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 312.57K  /  12 Page

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    INFINEON[Infineon Technologies AG]
http://
Part No. SPP11N60CFD
OCR Text ...min. 600 3 - Values typ. 700 4 1.1 900 0.38 1.02 0.86 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=11A A 1...6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 54...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS?/a> Power Transistor

File Size 151.20K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW11N60CFD
OCR Text ...min. 600 3 - Values typ. 700 4 1.1 900 0.38 1.02 0.86 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=11A A 1...6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 54...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

File Size 152.09K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW12N50C3
OCR Text ...lues typ. 600 3 0.1 0.34 0.92 1.4 max. 3.9 500 2.1 - Unit V A 1 100 100 0.38 nA Gate-source leakage current I GSS V GS=20V,...6mJ 300 V W V(BR)DSS 570 560 PAR 550 540 530 520 510 500 490 480 470 460 450 -60 ...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor

File Size 252.15K  /  11 Page

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For 4.6mj Found Datasheets File :: 141    Search Time::1.454ms    
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