4.6mj pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 141 Search Time::1.188ms
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				Infineon Technologies AG http:// Infineon Technologies A...
Part No.	IGD01N120H2 IGP01N120H207
OCR Text	...J-STD-020 and JESD-022 1 Rev. 2.4 Sept. 07 Power Semiconductors IGP01N120H2 IGD01N120H2 Thermal Resistance Parameter Characteristic ...6mJ 1 ) Eon and Ets include losses due to diode recovery. 0.25mJ Ets 1 1 ) Eon and ...
Description	HighSpeed 2-Technology
File Size	905.76K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP10N60A SGW10N60A SGP10N60A09
OCR Text	...Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 5 Unit V A 40 1500 100 660 75 51 68 A nC nH nA S pF IGE...6mJ 0.1 0.05 0.02 0,4mJ E ts* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 -3...
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	346.93K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IGP03N120H208 IGW03N120H2
OCR Text	... 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Unit Power Semiconductors 2 Rev. 2.6 Fe...6mJ 0.5mJ 0.5mJ Eoff 0.4mJ Eon 1 0.3mJ Eoff Eon 1 0.2mJ 0.0mJ 0A 2A 4A ...
Description	HighSpeed 2-Technology
File Size	340.03K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKP03N120H208
OCR Text	... 2.0 1.75 3 2.5 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value min. Typ. max. Unit Power Semiconductors 2 Rev. 2.5 Sept. 08 ...6mJ 0.5mJ Eoff 0.5mJ 0.4mJ Eon 1 0.3mJ Eoff Eon 1 0.2mJ 0.0mJ 0A 2A 4A ...
Description	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	375.48K / 15 Page	View it Online	Download Datasheet

				Infineon
Part No.	G03H1202
OCR Text	...Power Semiconductors DataSheet 4 U .com 1 Mar-04, Rev. 2.0 www.DataSheet4U.com IGA03N120H2 Thermal Resistance Parameter Chara...6mJ 0.5mJ Eoff 0.5mJ 0.4mJ Eon 1 0.3mJ Eoff Eon 1 0.2mJ 0.0mJ 0A 2A 4A ...
Description	High Speed 2-Technology
File Size	405.50K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKP10N60A SKB10N60A SKW10N60A
OCR Text	...0AB TO-247AC TO-263AB 1.35 2.4 62 40 40 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Ch...6mJ 0.1 0.05 0.02 0,4mJ Ets* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 4.3...
Description	Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
File Size	437.79K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKA10N60T
OCR Text	..., V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 10A V G E = 1 5V T O -220-3- 31 7 nH 551 40 17 62 nC pF IGES gfs RGint V C E = 0V ,V G E = 2 0V...6mJ due to diode recovery *) E on and E ts include losses due to diode recovery E, SWITCHING E...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	364.19K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW15N120 Q67040-S4281
OCR Text	... 2.5 - 3.1 3.7 2.0 3.6 4.3 2.5 5 A 200 800 100 1500 185 80 175 nC nH A nA S pF 3 - 1.75 4 11 IGES gfs Ciss Coss Crss QGate...6mJ 4mJ 2mJ 0mJ 0A E, SWITCHING ENERGY LOSSES Ets* Ets* 4mJ 3mJ Eon* 2mJ Eoff Eoff ...
Description	IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软，恢复快反平行Emcon二极
File Size	413.67K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
OCR Text	...Unit V 2.5 3 - 3.1 3.7 4 11 3.6 4.3 5 A 200 800 100 1500 120 80 175 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) ...6mJ 4mJ 2mJ 0mJ 0A E, SWITCHING ENERGY LOSSES Ets* Ets* 4mJ 3mJ Eon* 2mJ Eoff Eoff ...
Description	Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技 IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
File Size	448.47K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] http://
Part No.	IKW15T120 Q67040-S4516
OCR Text	...se recovery. 50 30 520 60 1.3 1.4 2.7 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000;...6mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITC...
Description	IGBTs & DuoPacks - 15A 1200V TO247 IGBT Diode LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT/FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
File Size	448.19K / 15 Page	View it Online	Download Datasheet

For 4.6mj Found Datasheets File :: 141 Search Time::1.188ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |